PART |
Description |
Maker |
2SJ517 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SK304 2SK304D |
N-Channel Silicon MOSFET Low-Frequency Aplifier Applications N-Channel Junction Silicon FET 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
Sanyo
|
HAT1021R |
Silicon P Channel Power MOS FET(P沟道功率MOSFET) P通道功率MOS FET性(P沟道功率MOSFET的) Silicon P Channel Power MOS FET(P娌?????MOSFET)
|
Hitachi,Ltd.
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
2SJ0536 |
Silicon P-Channel MOS FET Silicon P-Channel MOS FET 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor] PANASONIC CORP
|
2SK823 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SK3719 |
N-CHANNEL Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|